Intellectual Property Law

US Patent 7537975 - CNT organic thin film transistor

This patent from Samsung appears to include a broad claim for an insulated gate thin film field effect transistor formed with a mixture of carbon nanotubes and organic materials in the channel. Claim 1 reads:

1. An electronic device, comprising:

a substrate; and

a thin film transistor formed over the substrate,

the thin film transistor comprising a channel, a gate electrode, an insulating layer, a source, and a drain, the insulating layer being interposed between the channel and the gate electrode, wherein the channel comprises a mixture of carbon nanotubes and an organic semiconductor material, and wherein the carbon nanotubes are distributed substantially throughout the channel.

Full post as published by TinytechIP on May 27, 2009 (boomark / email).