Intellectual Property Law

US Patent 7687801 - CNT dopant material

This patent teaches dopants for carbon nanotube transistors enabling better control of the gate threshold voltage. Claim 1 reads:

1. A semiconductor device comprising, as the device,

a semiconductor material that is obtained by depositing, on a carbon nanotube, a donor with a smaller ionization potential than an intrinsic work function of the carbon nanotube or an acceptor with a larger electron affinity than the intrinsic work function of the carbon nanotube, wherein the ionization potential of the donor in vacuum is 6.4 eV or less.

Full post as published by TinytechIP on April 04, 2010 (boomark / email).