Intellectual Property Law

US Patent 7564269 - Integrated CNT/FET switch

This patent from Nantero teaches an integrated semiconductor and nanotube field effect switching structure with higher potential integration density and operating speed than conventional CMOS designs. Claim 1 reads:

1. A nonvolatile power control device comprising:

an input terminal;

an output terminal in electrical communication with a circuit to be controlled;

a control structure, electrical stimulation of the control structure controlling the formation of an electrically conductive channel between the signal input terminal and the output terminal, a first portion of the electrically conductive channel including a nanotube channel element and a second portion of the electrically conductive channel including a field modulatable semiconductor channel element;

wherein the formation of the electrically conductive channel controls power to the circuit to be controlled.

Full post as published by TinytechIP on July 27, 2009 (boomark / email).